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Electronic Devices and Nanotechnology (ELEC0029)

Key information

Faculty
Faculty of Engineering Sciences
Teaching department
Electronic and Electrical Engineering
Credit value
15
Restrictions
N/A
Timetable

Alternative credit options

There are no alternative credit options available for this module.

Description

This module provides greater depth and further insights into the fabrication, operational characteristics and underlying physics of electronic devices already introduced in first and second year courses. This module offers further study of fundamental semiconductor device physics, quantum mechanics, advanced technology and advanced devices, and emerging technologies such as III-V compound semiconductor heterostructures.


This course has the following aims:
• To learn silicon wafer technology, oxidation processes as well as micro-fabrication techniques.
• To learn doping and ion implantation, epitaxial growth of semiconductor films and metallisation.
• To understand basics of electronic states
• To learn basics of concepts/tools of quantum mechanics to describe electronic states and wave functions
• To learn the properties of III-V semiconductors both in bulk and at the nanoscale
• To investigate the design and fabrication of nanoscale electronic devices from these materials
• To appreciate the current state-of-the-art in performance with III-V semi-conductors and to speculate on materials and devices for ultimate nm-scale operation

At the end of this course, students will be able to:
• Describe how high grade silicon is fabricated from rare materials to wafer products.
• Answer to why silicon oxide make a good insulating material;
• Articulate semiconductor clearnroom processes and technologies and also other thin-film growth techniques.
• Describe the basic concepts of quantum mechanics and solve time-independent Schrodinger equations for simple potential profiles, hydrogen atom and operators/commutators
• Have clear understanding mobility, effective mass and other transport parameters connected to electronic structures.
• Describe the difference between Si semiconductor devices and III-V compound ones and demonstrate a basic understanding on the formation of III-V heterostructures such as HEMTs and their device operation and characteristics.
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Module deliveries for 2024/25 academic year

Intended teaching term: Term 2 ÌýÌýÌý Undergraduate (FHEQ Level 7)

Teaching and assessment

Mode of study
In Person
Methods of assessment
100% Exam
Mark scheme
Numeric Marks

Other information

Number of students on module in previous year
16
Module leader
Professor Neil Curson
Who to contact for more information
eee-ug-admin@ucl.ac.uk

Intended teaching term: Term 2 ÌýÌýÌý Undergraduate (FHEQ Level 6)

Teaching and assessment

Mode of study
In person
Methods of assessment
100% Exam
Mark scheme
Numeric Marks

Other information

Number of students on module in previous year
12
Module leader
Professor Neil Curson
Who to contact for more information
eee-ug-admin@ucl.ac.uk

Last updated

This module description was last updated on 19th August 2024.

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